AP4515GM Advanced Power Electronics Corp., AP4515GM Datasheet - Page 4

• Manufacturer Part Number: AP4515GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4515GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3.5
• Qgd (nc): 6
• Id(a): 7.7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4515GM
60
40
20
3.5
55
45
35
25
15
0
7
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
V
Reverse Diode
SD
GS
DS
T
2
4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
j
, Drain-to-Source Voltage (V)
=150
0.4
o
T
C
A
= 25
0.6
4
6
o
C
0.8
T
I
A
D
T
=25
8
6
= 5 A
j
V
=25
G
o
1
C
=3.0V
7.0V
5.0V
4.5V
o
10V
C
1.2
10
8
60
40
20
1.8
1.4
1.0
0.6
1.6
1.2
0.8
0.4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
T
=10V
=7A
v.s. Junction Temperature
Junction Temperature
j
, Junction Temperature (
V
2
T
0
0
DS
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
A
-6.3
=150
50
4
50
-5
o
C
o
C)
100
100
6
V
o
G
C)
=3.0V
7.0V
5.0V
4.5V
10V
150
150
8
4/7