AP4519GED Advanced Power Electronics Corp., AP4519GED Datasheet - Page 6

• Manufacturer Part Number: AP4519GED
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4519GED

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 48
• Qg (nc): 10
• Qgs (nc): 3
• Qgd (nc): 5
• Id(a): 6.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
AP4519GED
150
130
110
30
25
20
15
10
90
70
50
5
0
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
A
= 25
0.2
Reverse Diode
-V
o
-V
-V
C
SD
4
GS
DS
, Source-to-Drain Voltage (V)
T
,Gate-to-Source Voltage (V)
0.4
2
, Drain-to-Source Voltage (V)
j
=150
o
C
0.6
6
0.8
4
T
I
A
8
D
=25
V
=-3A
T
G
j
1
= - 3.0V
o
=25
-7.0V
-5.0V
-4.5V
-10V
C
o
C
10
1.2
6
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
30
25
20
15
10
5
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
G
D
= 150
=-10V
=-5A
T
v.s. Junction Temperature
Junction Temperature
-V
j
T
, Junction Temperature (
DS
o
0
0
j
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
4
o
100
C)
100
o
C)
V
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
6
150
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