AP9976GP Advanced Power Electronics Corp., AP9976GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9976GP

Manufacturer Part Number
AP9976GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9976GP

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
21
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
30
Qgs (nc)
5.4
Qgd (nc)
11
Id(a)
30
Pd(w)
39
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
S
D
±20
100
60
30
19
39
DS(ON)
DSS
Value
3.2
62
AP9976GP
TO-220(P)
21mΩ
200806021
Units
Units
℃/W
℃/W
60V
30A
W
V
V
A
A
A
1

Related parts for AP9976GP

AP9976GP Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9976GP RoHS-compliant Product BV 60V DSS R 21mΩ DS(ON) I 30A D G TO-220( Rating Units 60 ± ...

Page 2

... AP9976GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.4 I =18A D V =10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9976GP o C 10V 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...

Page 4

... AP9976GP =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 9976GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...

Related keywords