AP9976GP Advanced Power Electronics Corp., AP9976GP Datasheet - Page 4

• Manufacturer Part Number: AP9976GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9976GP

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 30
• Qgs (nc): 5.4
• Qgd (nc): 11
• Id(a): 30
• Pd(w): 39
• Configuration: Single N
• Package: TO-220

AP9976GP
1000
12
10
100
0.1
8
6
4
2
0
10
1
Fig 11. Switching Time Waveform
0
0.1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
I
T
Single Pulse
10%
90%
D
V
V
c
= 12 A
=25
DS
GS
V
o
DS
C
Q
V
10
1
G
, Drain-to-Source Voltage (V)
t
DS
V
d(on)
, Total Gate Charge (nC)
DS
= 30 V
V
DS
=36V
t
=48V
r
20
10
t
d(off)
100
100ms
30
100us
10ms
1ms
DC
t
f
1000
40
Fig 10. Effective Transient Thermal Impedance
1600
1200
0.01
800
400
0.1
0.00001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.02
0.1
0.05
0.01
0.2
V
G
Duty factor=0.5
5
Single Pulse
V
0.0001
DS
Q
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
C
C
C
C
oxx
rss
iss
1
29
4