AP30P10GP-HF Advanced Power Electronics Corp., AP30P10GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP30P10GP-HF

Manufacturer Part Number
AP30P10GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP30P10GP-HF

Vds
-100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
80
Rds(on) / Max(m?) Vgs@4.5v
100
Qg (nc)
50
Qgs (nc)
7.5
Qgd (nc)
16.5
Id(a)
-25
Pd(w)
89
Configuration
Single P
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP30P10GP-HF
Manufacturer:
SYNERGY
Quantity:
5 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
S
D
-100
+20
-25
-15
-80
89
DS(ON)
AP30P10GP-HF
DSS
Value
1.4
62
TO-220(P)
80mΩ
200909141
-100V
-25A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP30P10GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP30P10GP-HF Halogen-Free Product BV -100V DSS R 80mΩ DS(ON) I -25A D G TO-220( Rating Units ...

Page 2

... AP30P10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP30P10GP-HF -10V o C -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP30P10GP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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