AP95T10GP-HF Advanced Power Electronics Corp., AP95T10GP-HF Datasheet
AP95T10GP-HF
Specifications of AP95T10GP-HF
Related parts for AP95T10GP-HF
AP95T10GP-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V(Silicon Limited 10V(Silicon Limited 10V(Package Limited Parameter AP95T10GP-HF Halogen-Free Product BV 100V DSS R 6.4mΩ DS(ON) I 150A D G TO-220( Rating Units 100 ...
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... AP95T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 3.0 I =60A D V =10V 2.6 G 2.2 1.8 1.4 1.0 0.6 0.2 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95T10GP-HF o 10V T = 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...
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... AP95T10GP- =50V =60V DS V =80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...