AP75T12GP-HF Advanced Power Electronics Corp., AP75T12GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP75T12GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP75T12GP-HF

• Vds: 120V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 15
• Qg (nc): 60
• Qgs (nc): 8.5
• Qgd (nc): 27
• Id(a): 60
• Pd(w): 138
• Configuration: Single N
• Package: TO-220

200
160
120
80
40
40
30
20
10
30
26
22
18
14
10
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
V
T
V
4
DS
Reverse Diode
V
j
SD
=150
GS
4
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
o
C
8
T
0.6
C
= 25
6
I
T
0.8
o
D
A
C
12
=30A
=25
T
o
j
C
1
=25
8
V
16
o
C
GS
1.2
=4.0V
7.0V
6.0V
5.0V
10V
1.4
20
10
120
100
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=30A
=10V
V
v.s. Junction Temperature
Junction Temperature
4
DS
T
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
8
T
C
= 150
AP75T12GP-HF
50
50
o
12
C
100
100
o
o
V
C)
16
C)
GS
=4.0V
7.0V
6.0V
5.0V
10V
150
150
20
3