AP92T12GP-HF Advanced Power Electronics Corp., AP92T12GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP92T12GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP92T12GP-HF

• Vds: 120V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 8.5
• Qg (nc): 97
• Qgs (nc): 27
• Qgd (nc): 8
• Id(a): 130
• Pd(w): 375
• Configuration: Single N
• Package: TO-220

200
160
120
1.2
1.1
0.9
0.8
80
40
40
30
20
10
1
0
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
0.2
4
V
Temperature
T
V
DS
0
Reverse Diode
T
j
SD
T
=175
C
, Drain-to-Source Voltage (V)
= 25
j
, Source-to-Drain Voltage (V)
, Junction Temperature (
0.4
8
o
o
C
C
50
0.6
12
DSS
100
0.8
16
T
v.s. Junction
j
=25
V
o
o
150
C)
C
GS
20
1
=6.0V
9.0V
8.0V
7.0V
10V
1.2
24
200
160
120
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.6
1.2
0.8
0.4
0.0
80
40
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=30A
=10V
V
v.s. Junction Temperature
Junction Temperature
0
0
DS
T
T
4
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
T
C
50
50
= 175
AP92T12GP-HF
8
o
C
100
100
12
o
o
150
150
C)
V
C)
GS
=6.0V
9.0V
8.0V
7.0V
10V
200
200
16
3