AP13N50W-HF Advanced Power Electronics Corp., AP13N50W-HF Datasheet - Page 3

• Manufacturer Part Number: AP13N50W-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP13N50W-HF

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 520
• Qg (nc): 48
• Qgs (nc): 9
• Qgd (nc): 18
• Id(a): 14
• Configuration: Single N
• Package: TO-3P

1.2
1.1
0.9
0.8
10
30
20
10
1
0
8
6
4
2
0
0.0
-50
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
V
4.0
0.2
Temperature
T
Reverse Diode
DS
T
V
j
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
0
SD
=25
, Source-to-Drain Voltage (V)
T
8.0
0.4
o
j
C
=150
o
12.0
0.6
C
50
DSS
16.0
0.8
v.s. Junction
o
100
C)
V
T
20.0
G
j
1
=25
= 4.0 V
5.0V
4.5V
10 V
7.0 V
o
C
24.0
1.2
150
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
20
16
12
8
4
0
Fig 4. Normalized On-Resistance
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
V
C
I
=150
G
D
=10V
4.0
=7A
v.s. Junction Temperature
V
o
T
Junction Temperature
DS
C
j
T
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
8.0
j
, Junction Temperature (
12.0
50
50
16.0
AP13N50W
20.0
100
100
o
C )
V
o
C)
G
24.0
= 4.0V
4.5V
7.0V
5.0V
10V
28.0
150
150
3