IXTP16N50PM IXYS, IXTP16N50PM Datasheet - Page 4

• Manufacturer Part Number: IXTP16N50PM
• Manufacturer: IXYS

Specifications of IXTP16N50PM

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 7.5
• Rds(on), Max, Tj=25°c, (?): 0.42
• Ciss, Typ, (pf): 2480
• Qg, Typ, (nc): 43
• Trr, Typ, (ns): 400
• Pd, (w): 75
• Rthjc, Max, (k/w): 1.66
• Package Style: OVERMOLDED TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
28
24
20
16
12
10
1.0
0.1
8
4
0
9
8
7
6
5
4
3
2
1
0
0
0
10
R
DS(on)
V
I
I
D
G
T
T
Single Pulse
DS
J
C
= 8A
= 10mA
2
= 150ºC
= 25ºC
5
= 250V
Limit
Fig. 11. Forward-Bias Safe Operating Area
4
10
Fig. 7. Transconductance
6
15
Q
Fig. 9. Gate Charge
G
- NanoCoulombs
8
I
D
20
V
- Amperes
DS
10
DC
100
- Volts
25
12
10ms
30
14
T
J
= - 40ºC
1ms
125ºC
25ºC
35
16
40
18
25µs
100µs
20
45
1000
10,000
10.00
1,000
1.00
0.10
0.01
100
70
60
50
40
30
20
10
10
0.0001
0
1
0.3
0
f
Fig. 12. Maximum Transient Thermal Impedance
0.4
= 1 MHz
5
0.001
0.5
Fig. 8. Forward Voltage Drop of
10
0.6
Fig. 10. Capacitance
T
Pulse Width - Seconds
J
15
Intrinsic Diode
0.01
= 125ºC
V
V
SD
DS
0.7
- Volts
IXTP16N50PM
- Volts
20
0.8
0.1
25
T
0.9
J
C iss
C oss
C rss
= 25ºC
30
1
IXYS REF: F_16N50P(5J)4-30-09-C
1
35
1.1
10
1.2
40