IXTM13N80 IXYS, IXTM13N80 Datasheet

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IXTM13N80

Manufacturer Part Number
IXTM13N80
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTM13N80

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.8
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
145
Trr, Typ, (ns)
800
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-204
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
XYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
GSS
DSS
stg
J
JM
DSS
DGR
GS
GSM
D
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
Fax: 408-496-0670
GS
TM
, I
D
D
DC
D
DSS
FET
= 3 mA
= 250 A
, V
300 s,
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
TO-204 = 18 g, TO-247 = 6 g
11N80
13N80
11N80
13N80
11N80
13N80
min.
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
800
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
800
800
300
150
300
20
30
11
13
44
52
max.
0.95
0.80
100
250
4.5
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G = Gate,
S = Source,
Features
Applications
Advantages
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
V
DSS
DS (on)
HDMOS
D = Drain,
TAB = Drain
11 A 0.95
13 A 0.80
I
Fax: +49-6206-503629
D25
IXYS Semiconductor
TM
G
process
915380F (5/96)
D (TAB)
R
DS(on)

IXTM13N80 Summary of contents

Page 1

... Motor controls V Uninterruptible Power Supplies (UPS) 4 choppers 100 nA Advantages 250 Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) 0.95 Space savings 0.80 High power density Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 R D25 DS(on) D (TAB process 915380F (5/96) IXYS Semiconductor ...

Page 2

... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 8 14 ...

Page 3

... Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 - 100 T - Degrees C J Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 V GS(th) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 - 100 T - Degrees C J Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 125 150 125 150 IXYS Semiconductor ...

Page 4

... Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 100 125 150 20 25 0.001 0.01 Pulse Width - Seconds 5,049,961 5,187,117 5,486,715 5,063,307 5,237,481 5,381,025 IXTH 11N80 ...

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