IXTM13N80 IXYS, IXTM13N80 Datasheet - Page 3

• Manufacturer Part Number: IXTM13N80
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM13N80

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 13
• Rds(on), Max, Tj=25°c, (?): 0.8
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 800
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-204

I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone]
XYS reserves the right to change limits, test conditions, and dimensions.
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
2
= 25°C
-25
4
2
Case Temperature
Fax: [phone]
6
DS(on)
0
8 10 12 14 16 18 20 22 24 26
4
T
vs. Drain Current
25
I
C
D
V
V
- Degrees C
- Amperes
DS
GS
= 10V
50
- Volts
6
75
8
100
10
125
150
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
IXTH 11N80
IXTM 11N80
8
6
4
2
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
0
T
V
J
DS
1
-25
-25
= 25°C
= 10V
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone]
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
IXTM 13N80
IXTH 13N80
6
75
75
7
Fax: [phone]
100
100
IXYS Semiconductor
8
125 150
125 150
9
10