IXTM13N80 IXYS, IXTM13N80 Datasheet - Page 4

• Manufacturer Part Number: IXTM13N80
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM13N80

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 13
• Rds(on), Max, Tj=25°c, (?): 0.8
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 800
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-204

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508
4,850,072 4,931,844 5,034,796
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
8
6
4
2
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.01
D=0.5
D=0.1
D=0.05
D=0.02
D=0.2
Single Pulse
V
I
I
D
G
DS
= 13A
= 10mA
25
= 400V
5
Gate Charge - nCoulombs
50
0.0001
10
V
f = 1 MHz
V
C
C
C
CE
DS
iss
oss
rss
75
- Volts
= 25V
15
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
100
20
125
0.001
150
25
Pulse Width - Seconds
0.01
0.1
10
18
16
14
12
10
1
8
6
4
2
0
IXTH 11N80
IXTM 11N80
0.0
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
Limited by R
0.2
0.1
to Drain Voltage
T
J
= 125°C
0.4
10
DS(on)
0.6
V
V
SD
DS
- Volts
- Volts
0.8
T
IXTH 13N80
IXTM 13N80
1
J
= 25°C
100
1.0
1.2
1.4
1000
10
10µs
100µs
1ms
10ms
100ms