IXTH4N150 IXYS, IXTH4N150 Datasheet - Page 3

• Manufacturer Part Number: IXTH4N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH4N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 4
• Rds(on), Max, Tj=25°c, (?): 6
• Ciss, Typ, (pf): 1576
• Qg, Typ, (nc): 44.5
• Trr, Typ, (ns): 900
• Pd, (w): 280
• Rthjc, Max, (k/w): 0.45
• Package Style: TO-247

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4.5
3.5
2.5
1.5
0.5
4.5
3.5
2.5
1.5
0.5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
4
3
2
1
0
5
4
3
2
1
0
-50
-50
0
V
GS
-25
-25
Fig. 3. R
= 10V
Fig. 1. Output Characteristics @ T
4
Fig. 5. Maximum Drain Current vs.
0
0
DS(on)
8
Junction Temperature
T
T
Case Temperature
C
Normalized to I
J
25
25
- Degrees Centigrade
- Degrees Centigrade
12
V
DS
50
- Volts
50
16
I
D
= 4A
75
75
D
V
= 2A Value vs.
GS
= 10V
20
7V
I
100
100
J
5V
4V
D
6V
= 25ºC
= 2A
24
125
125
150
150
28
3.5
2.5
1.5
0.5
4.5
3.5
2.5
1.5
0.5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
4
3
2
1
0
3
2
1
0
3.5
0
0
V
GS
0.5
= 10V
Fig. 4. R
5
Fig. 2. Output Characteristics @ T
4.0
1
10
DS(on)
1.5
Fig. 6. Input Admittance
Normalized to I
15
4.5
Drain Current
2
I
D
V
V
T
- Amperes
DS
GS
J
= 125ºC
2.5
20
- Volts
- Volts
T
J
= 125ºC
5.0
3
IXTH4N150
25
D
T
J
25ºC
= 2A Value vs.
= 25ºC
V
3.5
GS
J
= 10V
30
= 125ºC
6V
5.5
5V
4V
4
- 40ºC
35
4.5
6.0
40
5