IXTT12N150 IXYS, IXTT12N150 Datasheet

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IXTT12N150

Manufacturer Part Number
IXTT12N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTT12N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
2.0
Ciss, Typ, (pf)
3720
Qg, Typ, (nc)
106
Trr, Typ, (ns)
1200
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
TO-268

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTT12N150
Manufacturer:
IXYS
Quantity:
193
Part Number:
IXTT12N150HV
Manufacturer:
IXYS
Quantity:
389
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) From Case for 10s
Plastic Body for 10s
Mounting Torque
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 1mA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTH12N150
IXTT12N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
2.5
Maximum Ratings
1.13 / 10
1500
1500
±30
±40
890
150
300
260
750
4.0
6.0
12
40
Typ.
6
±100 nA
Nm/lb.in.
500 μA
Max.
4.5
25 μA
2
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
Low Package Inductance
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
= 1500V
= 12A
≤ ≤ ≤ ≤ ≤
S
G
Tab = Drain
D
S
2Ω Ω Ω Ω Ω
D
D
= Drain
(Tab)
(Tab)
DS100425(12/11)

Related parts for IXTT12N150

IXTT12N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTT12N150 IXTH12N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±30 ± 750 890 - 55 ... +150 150 - 55 ... +150 300 260 1. 4.0 6.0 Characteristic Values Min ...

Page 2

... D 20.80 21.46 E 15.75 16.26 e 5.20 L 19.81 20.32 L1 ∅P 3.55 Q 5.89 R 4.32 S 6.15 BSC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTT12N150 IXTH12N150 2,4 - Drain ∅ Drain Inches Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 .084 3.12 .113 .123 .8 .016 .031 ...

Page 3

... D 2 1.8 1.6 1.4 1.2 1.0 0.8 75 100 125 150 3.0 75 100 125 150 IXTT12N150 IXTH12N150 Fig. 2. Output Characteristics @ Volts DS Fig Normalized Value vs. DS(on) D Drain Current V = 10V 125º Amperes D Fig. 6. Input Admittance T = 125º ...

Page 4

... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125º 0.3 0.4 0.5 0.6 0 Volts SD Fig. 10. Capacitance MHz Volts DS Fig. 12. Maximum Transient Thermal Impedance 1 0.0001 0.001 0.01 Pulse Width - Seconds IXTT12N150 IXTH12N150 T = 25ºC J 0.8 0.9 1.0 C iss C oss C rss 0 IXYS REF: T_12N150 (8M) 5-23-11 ...

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