IXTT12N150 IXYS, IXTT12N150 Datasheet - Page 4

• Manufacturer Part Number: IXTT12N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTT12N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 2.0
• Ciss, Typ, (pf): 3720
• Qg, Typ, (nc): 106
• Trr, Typ, (ns): 1200
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
0.1
10
22
20
18
16
14
12
10
10
1
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
10
0
0
V
I
I
T
T
Single Pulse
R
D
G
DS
10
J
C
DS(on)
= 6A
= 10mA
= 150ºC
= 25ºC
= 750V
2
Fig. 11. Forward-Bias Safe Operating Area
Limit
20
30
4
Fig. 7. Transconductance
100
Fig. 9. Gate Charge
40
Q
G
- NanoCoulombs
I
6
D
V
50
DS
- Amperes
- Volts
60
8
70
1,000
10
80
T
25µs
100µs
1ms
10ms
DC
J
= - 40ºC
125ºC
90
25ºC
12
100
10,000
110
14
10,000
0.001
1,000
0.01
100
0.1
40
35
30
25
20
15
10
0.00001
10
5
0
1
0.3
0
f
Fig. 12. Maximum Transient Thermal Impedance
= 1 MHz
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.4
0.0001
10
0.5
0.001
Fig. 10. Capacitance
Pulse Width - Seconds
15
0.6
V
V
SD
DS
0.01
T
- Volts
20
- Volts
J
= 125ºC
0.7
25
0.1
C oss
C rss
IXTH12N150
C iss
IXTT12N150
0.8
30
T
J
IXYS REF: T_12N150 (8M) 5-23-11
= 25ºC
1
0.9
35
1.0
40
10