IXTK20N150 IXYS, IXTK20N150 Datasheet

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IXTK20N150

Manufacturer Part Number
IXTK20N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTK20N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
1.0
Ciss, Typ, (pf)
7800
Qg, Typ, (nc)
215
Trr, Typ, (ns)
1100
Pd, (w)
1250
Rthjc, Max, (k/w)
0.10
Package Style
TO-264

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK20N150
Manufacturer:
IXYS
Quantity:
124
High Voltage Power
MOSFETs w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 1mA
= 1mA
GS
= 0.5 • I
DS
= 0V
= 0V
(PLUS247)
D25
GS
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTK20N150
IXTX20N150
20..120 /4.5..27
1500
-55 to +150
-55 to +150
2.5
Characteristic Values
Min.
Maximum Ratings
1.13/10
1500
1500
1250
±30
±40
150
300
260
2.5
Typ.
20
50
10
10
6
Max.
±200 nA
Nm/lb.in.
4.5
750 μA
50 μA
1
N/lb.
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXTK)
PLUS247 (IXTX)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
Fast Intrinsic Diode
Guaranteed FBSOA at 75°C
Low Package Inductance
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
DS(on)
DSS
G
G
D
S
D
S
= 20A
< 1Ω Ω Ω Ω Ω
= 1500V
D
Tab = Drain
= Drain
Tab
Tab
DS100424(12/11)

Related parts for IXTK20N150

IXTK20N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTK20N150 IXTX20N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±30 ± 2.5 1250 -55 to +150 150 -55 to +150 300 260 1.13/10 20..120 /4.5..27 ...

Page 2

... DSS D D25 93 0.15 Characteristic Values Min. Typ. = 75° 200 C Characteristic Values Min. Typ. JM 1.1 1.8 32 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK20N150 IXTX20N150 TO-264 Outline Max Millimeter Dim. Min. Max 4.82 5.13 A1 2.54 2. 2.00 2. ...

Page 3

... D 2 10A D 1.8 1.6 1.4 1.2 1.0 0 100 125 150 3.0 75 100 125 150 IXTK20N150 IXTX20N150 Fig. 2. Output Characteristics @ Volts DS Fig Normalized 10A Value vs. DS(on) D Drain Current V = 10V 125º 25º Amperes D Fig ...

Page 4

... MHz Volts DS Fig. 12. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse 10 100 V - Volts DS IXTK20N150 IXTX20N150 T = 25ºC J 0.8 0.9 1.0 C iss C oss C rss 25µs 100µs 1ms 10ms 100ms DC 1,000 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 12. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.001 0.01 Pulse Width - Seconds IXTK20N150 IXTX20N150 0.1 1 IXYS REF: IXT_20N150(9P)12-13-11 10 ...

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