IXTF1N250 IXYS, IXTF1N250 Datasheet - Page 3

• Manufacturer Part Number: IXTF1N250
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTF1N250

• Vdss, Max, (v): 2500
• Id(cont), Tc=25°c, (a): 1
• Rds(on), Max, Tj=25°c, (?): 40
• Ciss, Typ, (pf): 1660
• Qg, Typ, (nc): 41
• Trr, Typ, (ns): 2.5
• Pd, (w): 110
• Rthjc, Max, (k/w): 1.13
• Package Style: ISOPLUS i4-Pak

© 2009 IXYS CORPORATION, All Rights Reserved
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-50
0
V
GS
Fig. 4. R
5
-25
-25
Fig. 1. Output Characteristics @ T
= 10V
Fig. 5. Maximum Drain Current vs.
10
DS(on)
0
0
T
T
Junction Temperature
C
15
J
Normalized to I
- Degrees Centigrade
Case Temperature
- Degrees Centigrade
25
25
V
DS
20
- Volts
50
50
I
D
25
= 1A
V
75
D
I
75
GS
D
= 0.5A Value vs.
= 0.5A
= 10V
30
J
100
100
= @ 25ºC
5V
4V
35
125
125
40
150
150
45
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0
2.8
0
V
GS
3.0
0.1
Fig. 3. R
5
= 10V
Fig. 2. Output Characteristics @ T
3.2
0.2
10
DS(on)
3.4
0.3
Fig. 6. Input Admittance
T
15
J
Normalized to I
= 125ºC
3.6
I
0.4
Drain Current
D
V
V
DS
- Amperes
GS
20
3.8
- Volts
- Volts
0.5
4.0
25
V
0.6
GS
25ºC
D
IXTF1N250
4.2
= 10V
= 0.5A Value vs.
30
5V
0.7
T
T
4V
J
J
4.4
J
= 125ºC
= 25ºC
= 125ºC
35
0.8
4.6
- 40ºC
40
0.9
4.8
1.0
5.0
45