IXTN5N250 IXYS, IXTN5N250 Datasheet

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IXTN5N250

Manufacturer Part Number
IXTN5N250
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTN5N250

Vdss, Max, (v)
2500
Id(cont), Tc=25°c, (a)
5
Rds(on), Max, Tj=25°c, (?)
8.8
Ciss, Typ, (pf)
8560
Qg, Typ, (nc)
200
Trr, Typ, (ns)
1200
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
SOT-227

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN5N250
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
IXTN5N250
Manufacturer:
IXYS
Quantity:
101
High Voltage Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= 2kV, V
= 10V, I
GS
, I
D
D
D
= 1mA
= 1mA
GS
= 0.5 • I
DS
= 0V
t = 1s
= 0V
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTN5N250
2500
-55 to +150
-55 to +150
2.0
Characteristic Values
Min.
Maximum Ratings
1.3/11.5
1.5/13
2500
2500
2500
3000
±30
±40
700
150
2.5
Typ.
2.5
20
30
5
Max.
±200 nA
Nm/lb.in.
Nm/lb.in.
5.0
8.8
50 μA
4 mA
V~
V~
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
J
V
I
R
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
International Standard Package
Molding Epoxies Meet UL94 V-0
Flammability Classification
Guaranteed FBSOA at 75°C
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
G
= 5A
< 8.8Ω Ω Ω Ω Ω
= 2500V
D = Drain
S
DS100273A(08/10)
D
S

Related parts for IXTN5N250

IXTN5N250 Summary of contents

Page 1

... GSS 2kV DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTN5N250 Maximum Ratings 2500 = 1MΩ 2500 GS ±30 ± 2.5 2.5 700 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ. = 75° 220 C Characteristic Values Min. Typ 100V 1.2 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN5N250 SOT-227B (IXTN) Outline Max. 6 (M4 screws (4x) supplied 0.18 °C/W °C/W Max. W Max ...

Page 3

... Value vs. D 2.6 2.4 2.2 2.0 1.8 1 2.5A D 1.4 1.2 1.0 0.8 75 100 125 150 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 2.0 75 100 125 150 IXTN5N250 Fig. 2. Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Drain Current V = 10V 125º 25º 0.5 1 1 Amperes D Fig. 6. Input Admittance T = 125º ...

Page 4

... Fig. 10. Capacitance MHz Volts DS Fig. 12. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse DC 100 1,000 V - Volts DS IXTN5N250 = 25ºC J 0.9 1.0 1.1 1.2 1.3 C iss C oss C rss 25µs 100µs 1ms 10ms 100ms 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 12. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.001 0.01 Pulse Width - Seconds IXTN5N250 0.1 1 IXYS REF: IXT_5N250(9P)8-13-10-A 10 ...

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