IXTX5N250 IXYS, IXTX5N250 Datasheet

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IXTX5N250

Manufacturer Part Number
IXTX5N250
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTX5N250

Vdss, Max, (v)
2500
Id(cont), Tc=25°c, (a)
5
Rds(on), Max, Tj=25°c, (?)
8.8
Ciss, Typ, (pf)
8560
Qg, Typ, (nc)
200
Trr, Typ, (ns)
1200
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTX5N250
Manufacturer:
IXYS
Quantity:
494
High Voltage Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±30V, V
= 2kV, V
= 10V, I
GS
, I
D
D
D
= 1mA
= 1mA
GS
= 0.5 • I
DS
= 0V
= 0V
(PLUS247)
D25
GS
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTK5N250
IXTX5N250
20..120 /4.5..27
2500
-55 to +150
-55 to +150
2.0
Characteristic Values
Min.
Maximum Ratings
1.13/10
2500
2500
±30
±40
960
150
300
260
2.5
Typ.
2.5
20
10
5
6
Max.
±200 nA
Nm/lb.in.
5.0
8.8
50 μA
4 mA
N/lb.
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXTK)
PLUS247 (IXTX)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
Fast Intrinsic Diode
Guaranteed FBSOA at 75°C
Low Package Inductance
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
DS(on)
DSS
G
G
D
S
D
S
= 5A
< 8.8Ω Ω Ω Ω Ω
= 2500V
D
Tab = Drain
= Drain
Tab
Tab
DS100280(08/10)

IXTX5N250 Summary of contents

Page 1

... GSS 2kV DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTK5N250 IXTX5N250 Maximum Ratings 2500 = 1MΩ 2500 GS ±30 ± 2.5 2.5 960 -55 to +150 150 -55 to +150 300 260 1.13/10 20..120 /4.5..27 ...

Page 2

... BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTK5N250 IXTX5N250 Terminals Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) D Drain Current V = 10V 125º 25º 0.5 1 1 Amperes D Fig. 6. Input Admittance T = 125ºC J 2.5 3.0 3 Volts GS IXTK5N250 IXTX5N250 = 125º 10V 2.5A Value vs. 3.5 4 4.5 5 25ºC - 40ºC 4.0 4.5 5.0 ...

Page 4

... MHz Volts DS Fig. 12. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse DC 100 1,000 V - Volts DS IXTK5N250 IXTX5N250 = 25ºC J 0.9 1.0 1.1 1.2 1.3 C iss C oss C rss 25µs 100µs 1ms 10ms 100ms 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 12. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.001 0.01 Pulse Width - Seconds IXTK5N250 IXTX5N250 0.1 1 IXYS REF: IXT_5N250(9P)8-13-10-A 10 ...

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