IXTH03N400 IXYS, IXTH03N400 Datasheet

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IXTH03N400

Manufacturer Part Number
IXTH03N400
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTH03N400

Vdss, Max, (v)
4000
Id(cont), Tc=25°c, (a)
0.3
Rds(on), Max, Tj=25°c, (?)
290
Ciss, Typ, (pf)
435
Qg, Typ, (nc)
16.3
Trr, Typ, (ns)
2.8
Pd, (w)
130
Rthjc, Max, (k/w)
0.96
Package Style
TO-247
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force
PLUS220
V
V
V
V
V
Test Conditions
J
J
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 0V, I
= V
= ±20V, V
= 0.8 • V
= 10V, I
GS
, I
D
D
D
= 250μA
= 250μA
DSS
= 0.5 • I
DS
, V
= 0V
(PLUS220)
GS
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
Advance Technical Information
= 125°C
JM
IXTH03N400
IXTV03N400S
11..65 / 25..14.6
- 55 ... +150
- 55 ... +150
4000
2.0
Min.
Maximum Ratings
Characteristic Values
1.13 / 10
4000
4000
±20
±30
300
800
130
150
300
260
Typ.
4
6
±100
Nm/lb.in.
750 μA
290
Max.
4.0
10 μA
N/lb.
mA
mA
nA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
V
V
g
g
V
I
R
TO-247 (IXTH)
PLUS220SMD (IXTV_S)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
≤ ≤ ≤ ≤ ≤
=
=
S
G
S
D
Tab = Drain
290Ω Ω Ω Ω Ω
4000V
300mA
D (Tab)
D (Tab)
= Drain
DS100214(11/09)

Related parts for IXTH03N400

IXTH03N400 Summary of contents

Page 1

... GSS 0.8 • DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH03N400 IXTV03N400S Maximum Ratings 4000 = 1MΩ 4000 GS ±20 ±30 300 800 JM 130 - 55 ... +150 150 - 55 ... +150 300 260 1. 11..65 / 25..14 Characteristic Values Min ...

Page 2

... D 58 16.3 = 0.5 • I 1.9 D D25 8.8 0.25 Characteristic Values Min. Typ 200V 2.8 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH03N400 IXTV03N400S TO-247 (IXTH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter Min 4.7 A 2.2 0.96 °C 2.2 2 ° ...

Page 3

... Value D 350 300 T = 125ºC J 250 200 150 100 T = 25º 400 500 600 IXTH03N400 IXTV03N400S Fig. 2. Extended Output Characteristics @ 10V 100 150 200 250 V - Volts DS Fig Normalized to I DS(on) D vs. Junction Temperature ...

Page 4

... C iss 1.0 C oss C rss 0 0.00001 IXTH03N400 IXTV03N400S Fig. 8. Transconductance 0 50 100 150 200 I - MilliAmperes D Fig. 10. Gate Charge V = 1000V 150mA 1mA G Fig. 12. Maximum Transient Thermal Impedance NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance adad 0 ...

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