IXTH03N400 IXYS, IXTH03N400 Datasheet - Page 2

• Manufacturer Part Number: IXTH03N400
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH03N400

• Vdss, Max, (v): 4000
• Id(cont), Tc=25°c, (a): 0.3
• Rds(on), Max, Tj=25°c, (?): 290
• Ciss, Typ, (pf): 435
• Qg, Typ, (nc): 16.3
• Trr, Typ, (ns): 2.8
• Pd, (w): 130
• Rthjc, Max, (k/w): 0.96
• Package Style: TO-247

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Notes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1.
2.
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Additional provisions for lead-to-lead voltage isolation are
required at V
V
Resistive Switching Times
V
R
V
(TO-247 & PLUS220)
V
Repetitive, Pulse Width Limited by T
I
I
Test Conditions
Test Conditions
V
F
F
GS
GS
GS
GS
DS
G
= 300mA, V
= 1A, -di/dt = 100A/μs, V
= 0V, V
= 10V, V
= 50Ω (External)
= 10V, V
= 0V
= 50V, I
ADVANCE TECHNICAL INFORMATION
CE
DS
D
DS
DS
> 1200V.
= 100mA, Note 1
= 25V, f = 1MHz
GS
= 1000V, I
= 250V, I
4,835,592
4,881,106
= 0V, Note 1
D
4,931,844
5,017,508
5,034,796
D
= 150mA
R
= 0.5 • I
= 200V
5,049,961
5,063,307
5,187,117
D25
JM
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
110
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
16.3
0.25
180
435
1.9
8.8
Typ.
17
2.8
19
16
86
58
6
0.96 °C/W
Max.
300 mA
6,404,065 B1
6,534,343
6,583,505
Max.
1.2
3.0
°C/W
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
μs
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS220SMD (IXTV_S) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
IXTH03N400
IXTV03N400S
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216