IXTH03N400 IXYS, IXTH03N400 Datasheet - Page 4

• Manufacturer Part Number: IXTH03N400
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH03N400

• Vdss, Max, (v): 4000
• Id(cont), Tc=25°c, (a): 0.3
• Rds(on), Max, Tj=25°c, (?): 290
• Ciss, Typ, (pf): 435
• Qg, Typ, (nc): 16.3
• Trr, Typ, (ns): 2.8
• Pd, (w): 130
• Rthjc, Max, (k/w): 0.96
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
900
800
700
600
500
400
300
200
100
100
350
300
250
200
150
100
10
50
1
0
0
2.0
0.0
0
f = 1 MHz
2.5
5
0.5
T
J
= 125ºC
3.0
Fig. 9. Forward Voltage Drop of
10
1.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
3.5
J
15
Intrinsic Diode
= 25ºC
T
1.5
J
V
= 125ºC
V
V
SD
GS
- 40ºC
DS
25ºC
4.0
- Volts
20
- Volts
- Volts
2.0
4.5
25
C iss
C oss
C rss
2.5
5.0
30
3.0
5.5
35
6.0
3.5
40
10.0
2.0
1.0
0.1
0.00001
400
350
300
250
200
150
100
10
50
0
9
8
7
6
5
4
3
2
1
0
0
0
Fig. 12. Maximum Transient Thermal Impedance
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
D
G
DS
= 150mA
= 1mA
0.0001
= 1000V
2
50
4
0.001
Fig. 8. Transconductance
100
6
Pulse Width - Seconds
Fig. 10. Gate Charge
Q
G
I
D
- NanoCoulombs
- MilliAmperes
adad
8
150
0.01
10
200
IXTH03N400
IXTV03N400S
0.1
12
T
J
250
= - 40ºC
14
IXYS REF: T_03N400(3P)10-27-09
125ºC
1
25ºC
16
300
10
18