IXFM42N20 IXYS, IXFM42N20 Datasheet - Page 4

• Manufacturer Part Number: IXFM42N20
• Description: Standard HiperFETs (50V to 1200V)
• Manufacturer: IXYS

Specifications of IXFM42N20

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 42
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 4400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204

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0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
14
12
10
8
6
4
2
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
D=0.2
D=0.1
D=0.01
D=0.5
D=0.05
D=0.02
V
I
I
Single Pulse
D
G
DS
= 50A
= 10mA
= 100V
25
5
Gate Charge - nCoulombs
50
75
0.0001
10
V
f = 1MHz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
C
C
C
iss
oss
rss
15
20
0.001
IXFH/IXFM42N20
IXFH/IXFM50N20
25
Time - Seconds
0.01
100
10
50
40
30
20
10
1
0
0.4
Fig.8 Forward Bias Safe Operating Area
1
Fig.10 Source Current vs. Source
IXFH/IXFM58N20 IXFT50N20
Limited by R
0.1
0.6
T
to Drain Voltage
J
DS(on)
= 125°C
0.8
V
V
10
SD
DS
T
J
= 25°C
- Volts
- Volts
1
1.0
IXFT58N20
1.2
100
200
1.4
10
100µs
10µs
1ms
100ms
10ms
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