IXFN22N120 IXYS, IXFN22N120 Datasheet
IXFN22N120
Manufacturer Part Number
IXFN22N120
Description
Standard HiperFETs (50V to 1200V)
Manufacturer
IXYS
Datasheet
1.IXFN22N120.pdf
(2 pages)
Specifications of IXFN22N120
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.55
Ciss, Typ, (pf)
8100
Qg, Typ, (nc)
210
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
625
Rthjc, Max, (ºc/w)
0.20
Package Style
SOT-227B
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
DM
AR
GSS
D25
DSS
J
JM
stg
DGR
GS
GSM
AR
D
ISOL
GH(th)
DSS
DSS
DS(on)
d
T
T
T
T
Test Conditions
T
T
Continuous
Transient
I
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
duty cycle d 2 %
T
S
ISOL
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
C
= 25 C
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
I
150 C, R
DM
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
TM
1 mA
, di/dt
GS
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
G
, V
= 0.5 • I
100 A/ s, V
300 s,
= 2
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 M
DD
T
T
(T
Advanced Technical Information
J
J
rr
V
J
= 25 C
= 125 C
DSS
= 25 C, unless otherwise specified)
,
JM
1200
min.
IXFN 22N120
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1200
1200
2500
3000
S
G
625
150
30
40
22
88
22
30
30
5
max.
0.55
200
5.0
50
2
D
S
V/ns
mA
mJ
nA
V~
V~
V
V
W
C
C
C
V
V
V
V
A
A
A
A
g
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
E153432
DS(on)
DSS
DS (on)
HDMOS
G
= 1200V
=
= 0.55
D = Drain
TAB = Drain
S
300ns
TM
22A
D
process
DS98967(12/02)
S
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IXFN22N120 Summary of contents
Page 1
... DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle © 2001 IXYS All rights reserved Advanced Technical Information IXFN 22N120 Maximum Ratings 1200 = 1 M 1200 DSS 625 -55 ...
Page 2
... -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 15 26 8100 ...