IXTH10N100D2 IXYS, IXTH10N100D2 Datasheet

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IXTH10N100D2

Manufacturer Part Number
IXTH10N100D2
Description
D2 Depletion Mode Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTH10N100D2

Vds, Max, (v)
1000
Id(on), Min, (a)
10
Rds(on), Max, (?)
1.5
Vgs(off), Max, (v)
-4.5
Ciss, Typ, (pf)
5320
Crss, Typ, (pf)
70
Qg, Typ, (nc)
200
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Depletion Mode
MOSFETs
N-Channel
Symbol
V
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2011 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
DGX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
V
V
V
V
V
V
Test Conditions
J
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 5A, Note 1
= 1mA
= 250μA
GS
= 25V, Note 1
DS
= - 5V
= 0V
GS
= 1MΩ
Advance Technical Information
T
J
= 125°C
IXTH10N100D2
IXTT10N100D2
- 2.5
10
1000
Characteristic Values
Min.
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13 / 10
1000
1000
±20
±30
695
150
300
260
Typ.
6
4
Max.
±100 nA
- 4.5
Nm/lb.in.
250 μA
1.5
10 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
V
A
g
g
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D
≤ ≤ ≤ ≤ ≤
=
>
S
G
D
Tab = Drain
S
1.5Ω Ω Ω Ω Ω
1000V
10A
D (Tab)
D (Tab)
= Drain
DS100326(04/11)

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IXTH10N100D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 5A, Note 1 DS(on 0V 25V, Note 1 D(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH10N100D2 IXTT10N100D2 Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ. = 75° 176 C Characteristic Values Min. Typ. 0.8 1.2 23 13.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH10N100D2 IXTT10N100D2 TO-247 Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 1 0.18 °C ...

Page 3

... J 1.E+ 3.50V 1.E+ 3.75V 1.E+09 - 4.00V 1.E+08 - 4.25V 1.E+07 - 4.50V 1.E+06 - 4.75V 1.E+05 - 5.00V 1.E+04 700 800 900 1000 1100 1200 IXTH10N100D2 IXTT10N100D2 Fig. 2. Extended Output Characteristics @ Volts DS Fig. 4. Drain Current @ T 0 100 200 300 400 500 600 700 V - Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage ...

Page 4

... Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.4 0.5 0 Volts SD IXTH10N100D2 IXTT10N100D2 = 5A Value 40ºC J 25ºC 125º 25ºC J 0.7 0.8 0.9 ...

Page 5

... Fig. 17. Maximum Transient Thermal Impedance 100ms DC 0 1,000 10 Fig. 17. Maximum Transient Thermal Impedance hvjv 0.001 0.01 Pulse Width - Seconds IXTH10N100D2 IXTT10N100D2 Fig. 14. Gate Charge V = 500V 10mA 100 120 140 Q - NanoCoulombs G Fig ...

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