CPC3720 IXYS, CPC3720 Datasheet
CPC3720
Specifications of CPC3720
Related parts for CPC3720
CPC3720 Summary of contents
Page 1
... MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications ...
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... D =130mA - - D = 10V 225 - 50 150mA - 0.6 SD =25ºC ºC 130mA V DD PULSE GENERATOR R gen INPUT CPC3720 Max Units - V P -3.9 V 3.3 mV/ºC 100 nA 22 0.9 %/ºC 350 1 DRM 600mA R L OUTPUT D ...
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... Temperature (ºC) Capacitance vs. Drain Source Voltage (V =-5V) GS 160 140 120 100 RSS 0 1000 (V) DS PRELIMINARY CPC3720 V vs. Temperature GS(off) (V =10V, I =1mA -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -1.0 - Temperature (ºC) Transconductance vs. Drain Current (V =10V) DS 300 -55ºC 250 +25º ...
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... Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used RoHS 3 2002/95/EC 4 Moisture Sensitivity Level (MSL) Rating MSL 1 Maximum Temperature x Time 260ºC for 30 seconds PRELIMINARY CPC3720 R00B ...
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... CPC3720C Tape & Reel (7.00 Dia) Embossed Carrier For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’ ...