IXTT110N10L2 IXYS, IXTT110N10L2 Datasheet

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IXTT110N10L2

Manufacturer Part Number
IXTT110N10L2
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTT110N10L2

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
10500
Qg, Typ, (nc)
260
Trr, Typ, (ns)
230
Pd, (w)
600
Rthjc, Max, (k/w)
0.21
Package Style
TO-268
LinearL2
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 10V, I
= 0V, I
= V
= ±20V, V
= V
Power
GS
DSS
, I
, V
D
D
D
= 250μA
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTH110N10L2
IXTT110N10L2
-55 to +150
-55 to +150
Characteristic Values
Min.
100
1.13/10
2.5
Maximum Ratings
+150
±30
600
300
110
110
260
100
100
±20
300
6.0
4.0
3
Typ.
±100
Nm/lb.in.
Max.
4.5
50
18 mΩ
5
μA
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Integrated Gate Resistor for Easy
Guaranteed FBSOA at 75°C
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Paralleling
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
≤ ≤ ≤ ≤ ≤ 18mΩ Ω Ω Ω Ω
= 100V
= 110A
S
G
D
Tab = Drain
S
D (Tab)
D (Tab)
= Drain
DS100235(01/10)

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IXTT110N10L2 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH110N10L2 IXTT110N10L2 Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 110 300 JM 110 3 600 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 4.0 Characteristic Values Min ...

Page 2

... C Characteristic Values Min. Typ. JM 230 19.4 2.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH110N10L2 IXTT110N10L2 TO-247 (IXTH) Outline Max Ω Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 ...

Page 3

... Value vs. D 120 T = 125ºC J 100 25º 200 250 300 IXTH110N10L2 IXTT110N10L2 Fig. 2. Extended Output Characteristics @ 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 6.5 7.0 7.5 8.0 8.5 9.0 - Volts T = 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXTH110N10L2 IXTT110N10L2 Fig. 8. Transconductance 100 100 120 I - Amperes D Fig. 10. Gate Charge 50V DS 14 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 14. Forward-Bias Safe Operating Area 1,000 R Limit DS(on) 25µs 100µs 100 1ms 10ms 10 100ms 150º 75ºC C Single Pulse 1 1 100 IXTH110N10L2 IXTT110N10L2 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 10 100 V - Volts DS IXYS REF: T_110N10L2(8R)01-22-10 ...

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