IXTT80N20L IXYS, IXTT80N20L Datasheet

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IXTT80N20L

Manufacturer Part Number
IXTT80N20L
Description
Standard Linear Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTT80N20L

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.032
Ciss, Typ, (pf)
6160
Qg, Typ, (nc)
180
Trr, Typ, (ns)
250
Pd, (w)
520
Rthjc, Max, (k/w)
0.24
Package Style
TO-268
Linear
Power MOSFET
w/ Extended FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
Symbol
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Test Conditions
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 10V, I
= 0V, I
= V
= ±20V, V
= V
GS
DSS
, I
, V
D
D
D
= 250μA
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTH80N20L
IXTT80N20L
-55 to +150
-55 to +150
Min.
Characteristic Values
200
1.13/10
2.0
Maximum Ratings
+150
520
300
260
200
200
±20
±30
340
2.5
80
80
4
6
Typ.
±100
250
Nm/lb.in.
Max.
4.0
32 mΩ
25
μA
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Guaranteed FBSOA at 75°C
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
≤ ≤ ≤ ≤ ≤ 32mΩ Ω Ω Ω Ω
= 200V
= 80A
S
G
D
Tab = Drain
S
D (Tab)
D (Tab)
= Drain
DS100294(11/10)

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IXTT80N20L Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTT80N20L IXTH80N20L Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 80 340 JM 80 2.5 520 -55 to +150 +150 -55 to +150 300 260 1.13/ Characteristic Values Min ...

Page 2

... C Characteristic Values Min. Typ. JM 250 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTT80N20L IXTH80N20L TO-268 Outline Max Terminals Gate 3 - Source 0.24 °C/W °C/W Max. W TO-247 Outline Max. ...

Page 3

... Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade C IXTT80N20L IXTH80N20L = 25º 40A Value vs 80A 40A D 75 100 125 150 75 100 125 150 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 100V 40A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTT80N20L IXTH80N20L 100 140 160 180 200 0 ...

Page 5

... IXYS CORPORATION, All Rights Reserved 1000 R DS(on) Limit 25µs 100 100µs 1ms 10 10ms 100ms Single Pulse 0.1 1 100 1000 IXTT80N20L IXTH80N20L Fig. 14. Forward-Bias Safe Operating Area @ T = 75º 150º 75º 100 V - Volts DS 25µs 100µs 1ms 10ms ...

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