IXTA15N50L2 IXYS, IXTA15N50L2 Datasheet

no-image

IXTA15N50L2

Manufacturer Part Number
IXTA15N50L2
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTA15N50L2

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.480
Ciss, Typ, (pf)
4080
Qg, Typ, (nc)
123
Trr, Typ, (ns)
570
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Linear L2
Power MOSFETs
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA15N50L2
IXTP15N50L2
IXTH15N50L2
-55 ... +150
-55 ... +150
Characteristic Values
Min.
500
2.5
Maximum Ratings
1.13/10
500
500
±20
±30
750
300
150
300
260
2.5
3.0
6.0
15
15
35
Typ.
±100 nA
Nm/lb.in.
Max.
200 μA
480 mΩ
4.5
25 μA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75°C
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
G
D
D S
≤ ≤ ≤ ≤ ≤
=
=
S
G
S
Tab = Drain
D
480mΩ Ω Ω Ω Ω
500V
15A
D (Tab)
D (Tab)
D
= Drain
(Tab)
DS100054B(12/11)

Related parts for IXTA15N50L2

IXTA15N50L2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Maximum Ratings 500 = 1MΩ 500 GS ±20 ± 750 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 6.0 Characteristic Values Min ...

Page 2

... C Characteristic Values Min. Typ 100V 570 R GS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 TO-247 Outline Max. 8 Gate Drain 3 = Source 0.42 °C/W °C/W °C/W Max. W TO-220 Outline Max ...

Page 3

... J 2 20V GS 10V 2 2.0 7V 1.6 1.2 6V 0 7.5A Value vs 125º 25º IXTA15N50L2 IXTP15N50L2 Fig. 2. Extended Output Characteristics @ 20V GS 14V 35 12V 10V Volts DS Fig Normalized to I DS(on) Junction Temperature ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 6.0 6.5 7.0 7.5 8.0 8 25ºC J 0.8 0 iss C oss 0.1 C rss 0. 0.0001 IXTA15N50L2 IXTP15N50L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 250V 7. 10mA ...

Page 5

... C Single Pulse 0.1 10 100 V - Volts DS © 2011 IXYS CORPORATION, All Rights Reserved = 25ºC 100 25µs 100µs 10 1ms 10ms 1 100ms DC 0.1 1000 IXTA15N50L2 IXTP15N50L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse 10 100 V - Volts DS IXTH15N50L2 25µs 100µ ...

Related keywords