IXFP130N10T2 IXYS, IXFP130N10T2 Datasheet

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IXFP130N10T2

Manufacturer Part Number
IXFP130N10T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFP130N10T2

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
130
Rds(on), Max, Tj=25°c, (?)
0.0091
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
130
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
HiperFET
,, V
GS
DSS
, I
D
DD
, V
D
D
= 250μA
= 1mA
≤ V
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
,T
D25
J
≤ 175°C
GS
, Notes 1, 2
= 1MΩ
TM
Advance Technical Information
T
J
= 150°C
IXFA130N10T2
IXFP130N10T2
JM
-55 ... +175
-55 ... +175
Characteristic Values
100
Min.
2.0
Maximum Ratings
1.13 / 10
± 20
± 30
100
100
130
120
300
800
360
175
300
260
2.5
3.0
Typ.
65
20
±200 nA
Nm/lb.in.
Max.
500 μA
4.5
9.1 mΩ
10 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-263 AA (IXFA)
TO-220AB (IXFP)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Dynamic dV/dt Rated
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
DS(on)
G
D S
= 100V
= 130A
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
S
9.1mΩ Ω Ω Ω Ω
= Drain
D (Tab)
D (Tab)
DS100111(10/09)

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IXFP130N10T2 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFA130N10T2 TM IXFP130N10T2 Maximum Ratings 100 = 1MΩ 100 GS ± 20 ± 30 130 120 300 JM 65 800 ≤ 175°C 20 360 -55 ... +175 175 -55 ... +175 300 260 1 ...

Page 2

... I 35 DSS D D25 42 0.50 Characteristic Values Min. Typ. JM 4.8 156 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFA130N10T2 IXFP130N10T2 TO-263 (IXFA) Outline Max Dim. Millimeter nC Min 0.51 b2 1.14 0.42 °C/W c 0.40 c2 1.14 ° ...

Page 3

... T - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit -50 - Degrees Centigrade C IXFP130N10T2 = 25º 65A Value vs 130A 65A D 100 125 150 175 100 125 150 175 ...

Page 4

... Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 5.5 6.0 6.5 7.0 7 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1,000 C iss 100 C oss C rss IXFA130N10T2 IXFP130N10T2 Fig. 8. Transconductance 100 I - Amperes D Fig. 10. Gate Charge 50V 65A ...

Page 5

... R = 3.3Ω 10V 50V 25º IXFA130N10T2 IXFP130N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 3.3Ω 10V 50V 25º 125º 100 105 I - Amperes D Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFA130N10T2 IXFP130N10T2 0.1 1 IXYS REF: F_130N10T2(V5)9-30-09-A 10 ...

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