IXGX28N140B3H1 IXYS, IXGX28N140B3H1 Datasheet
IXGX28N140B3H1
Specifications of IXGX28N140B3H1
Related parts for IXGX28N140B3H1
IXGX28N140B3H1 Summary of contents
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... CES CE CES 0V ±20V GES 15V, Note 1 CE(sat) C C110 GE © 2010 IXYS CORPORATION, All Rights Reserved IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Maximum Ratings 1400 = 1MΩ 1400 GE ±20 ± 150 28 360 = 5Ω 120 < V CES CE 300 -55 ...
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... Characteristic Values Min. Typ 150°C 2.65 J 350 /dt = -200A/μs, 18.5 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Max 400 0.42 °C/W °C/W °C/W Max. ...
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... Emitter R Dim. TO-264 AA Outline Back Side Terminals Gate 2,4 = Collector Emitter T IXGX28N140B3H1 Millimeter Inches Min. Max. Min. Max. 4.7 5.3 .185 .209 2.2 2.54 .087 .102 2.2 2.6 .059 .098 1.0 1.4 .040 .055 1.65 2.13 .065 .084 2.87 3.12 .113 .123 ...
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... GE 13V 11V 1.4 9V 1.2 7V 1.0 0.8 5V 0.6 3 3.5 4 4.5 5 5.5 120 T = 25ºC J 100 IXGX28N140B3H1 Fig. 2. Extended Output Characteristics @ 15V GE 13V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance ...
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... C ies 80 C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGX28N140B3H1 Fig. 8. Gate Charge V = 600V 28A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...
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... IXGX28N140B3H1 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current off 5Ω 15V 960V 125º 25º ...
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... 28A 105 115 125 IXGX28N140B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 960V 125º Amperes C 36 ...