IXSX35N120AU1 IXYS, IXSX35N120AU1 Datasheet
IXSX35N120AU1
Specifications of IXSX35N120AU1
Related parts for IXSX35N120AU1
IXSX35N120AU1 Summary of contents
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... T = 25° 125°C J ±100 V = 1200 V CES I = C25 V = CE(SAT) TM PLUS TO-247 (IXSX35N120AU1 Gate Collector Emitter, TAB = Collector A Features ms • Hole-less TO-247 package for clip mounting W • High frequency IGBT and anti-parallel ...
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... J min. typ. = 125°C J /dt = 480 A/ 100°C 225 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSX 35N120AU1 TM PLUS247 (IXSX 190 ...
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... T = 125° 25° 40C Volts GE © 2000 IXYS All rights reserved 13V =15V 11V IXSX 35N120AU1 Fig.2 Output Characterstics 250 V = 15V T = 25° 200 150 ...
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... Q - nanocoulombs G Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 25 1250 20 1000 15 750 10 500 5 250 Fig.10 Turn-Off Safe Operating Area 100 10 1 0.1 0.01 150 200 0.001 0.01 Pulse Width - Seconds IXSX 35N120AU1 Fig ...
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... T - Degrees C J Fig.16 Peak Reverse Recovery Current 100° 540V 200 400 600 di /dt - A/µs F © 2000 IXYS All rights reserved 25° 120 160 1.0 max 60A F 0.8 0.6 typ 120A ...