IXGH2N250 IXYS, IXGH2N250 Datasheet

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IXGH2N250

Manufacturer Part Number
IXGH2N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet

Specifications of IXGH2N250

Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
5.5
Ic110, Tc=110°c, Igbt, (a)
2
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.1
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
3.9
Package Style
TO-247
High Voltage IGBTs
for Capacitor Discharge
Applications
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
V
C
C
C
C
J
C
C
C
C
CE
GE
= 250μA, V
= 250μA, V
CE
= I
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 25°C
= 25°C, 1ms
= 0V, V
= 110°C
= 15V, T
= 0.8 • V
C110
, V
GE
GE
VJ
CES
= 15V, Note 1
GE
CE
= ± 20V
= 125°C, R
= V
, V
= 0V
GE
GE
= 0V
GE
= 1MΩ
G
= 50Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
2500
IXGH2N250
IXGT2N250
3.0
Min.
Characteristic Values
V
-55 ... +150
-55 ... +150
CE
Maximum Ratings
1.13/10
I
CM
2000
2500
2500
± 20
± 30
13.5
150
300
260
= 6
Typ.
5.5
2.0
32
3.1
2.6
6
4
±100
Max.
Nm/lb.in.
100
5.5
10
3.1
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
TO-247 (IXGH)
Features
Advantages
Applications
C110
Optimized for Low Conduction and
Switching Losses
International Standard Packages
High Power Density
Low Gate Drive Requirement
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Capacitor Discharge Circuits
CES
CE(sat)
G
C
E
G
≤ ≤ ≤ ≤ ≤ 3.1V
= 2500V
= 2A
E
C
TAB = Collector
= Collector
C (TAB)
C (TAB)
DS100162(06/09)

Related parts for IXGH2N250

IXGH2N250 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C110 GE © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH2N250 IXGT2N250 Maximum Ratings 2500 = 1MΩ 2500 ± 20 ± 30 5.5 2.0 13.5 = 50Ω ≤ V 2000 CE 32 -55 ... +150 150 -55 ...

Page 2

... 100 26 = 125° 204 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH2N250 IXGT2N250 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source ns Dim. Millimeter ns Min. Max. A 4.7 5 ...

Page 3

... Fig. 4. Dependence of V Junction Temperature V = 15V -50 - Degrees Centigrade J Fig. 6. Input Admittance Volts GE IXGH2N250 IXGT2N250 CE(sat) 100 125 150 = - 40ºC J 25ºC 125º IXYS REF: G_2N250(2P)6-17-09 ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second Fig. 8. Gate Charge V = 1000V 1mA NanoCoulombs G Fig. 10. Capacitance MHz Volts CE 0.01 0.1 IXGH2N250 IXGT2N250 ies C oes C res ...

Page 5

... Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance d(off ) T = 125º 15V 1800V 100 125 150 175 200 225 R - Ohms G IXGH2N250 IXGT2N250 3.0 3.5 4 105 115 125 220 200 180 160 140 120 100 ...

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