IXGV25N250S IXYS, IXGV25N250S Datasheet
IXGV25N250S
Specifications of IXGV25N250S
Related parts for IXGV25N250S
IXGV25N250S Summary of contents
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... ±20 V GES CE(sat © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH25N250 IXGT25N250 IXGV25N250S Maximum Ratings 2500 = 1 MΩ 2500 GE ± 20 ± 200 = 20 Ω 240 G CM 250 -55 ... +150 150 -55 ...
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... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 IXGH25N250 IXGT25N250 IXGV25N250S Characteristic Values (T = 25°C unless otherwise specified) J Min. ...
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... V - Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Volts GE © 2007 IXYS CORPORATION, All rights reserved IXGH25N250 IXGT25N250 IXGV25N250S 250 225 20V 200 15V 175 150 10V 125 100 2.4 2.2 2 1.8 15V 1 ...
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... C 205 200 195 190 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. IXGH25N250 IXGT25N250 IXGV25N250S 680 640 600 560 520 480 440 400 360 320 280 240 200 120 140 160 ...
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... Ω < 10V / ns 0 250 500 750 1000 1250 1500 V - Volts CE 1.00 0.10 0.01 0.0001 0.001 © 2007 IXYS CORPORATION, All rights reserved IXGH25N250 IXGT25N250 IXGV25N250S 280 16 V 265 14 I 250 I 235 12 220 10 205 8 190 175 6 160 4 145 130 2 ...