IXBT16N170 IXYS, IXBT16N170 Datasheet

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IXBT16N170

Manufacturer Part Number
IXBT16N170
Description
HV (1600V-1700V)
Manufacturer
IXYS
Datasheet

Specifications of IXBT16N170

Vces, (v)
1700
Ic25, Tc=25°c, (a)
40
Ic90, Tc=90°c, (a)
16
Vce(sat), Typ, Tj=25°c, (v)
3.3
Tf Typ, Tj=25°c, (ns)
705
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.50
Package Style
TO-268

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXBT16N170
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXBT16N170A
Manufacturer:
IXYS
Quantity:
18 000
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
C
CE
GE
CE
GE
= 250μA, V
= 250μA, V
= 16A, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 90°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8 • V
= 0V
= 15V, T
TM
Monolithic
GE
GE
CES
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
= V
= 0V
GE
GE
= 1M
G
= 22
Ω
Ω
T
T
J
J
= 125°C
= 125°C
IXBH16N170
IXBT16N170
1700
V
-55 ... +150
-55 ... +150
Characteristic Values
3.0
CES
Min.
I
CM
1.13/10
Maximum Ratings
= 40
1350
1700
1700
± 20
± 30
120
250
150
300
260
40
16
Typ.
6
4
3.2
Max.
±100
Nm/lb.in.
5.5
3.3
50
2 mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
g
TO-247 (IXBH)
TO-268 (IXBT)
G = Gate
E = Emitter
V
I
V
Features
Advantages
Applications:
C90
International standard packages
Low conduction losses
Low gate drive requirement
High power density
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
Laser generator
Capacitor discharge circuit
AC switches
High blocking voltage
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 3.3V
= 1700V
= 16A
E
E
C
TAB = Collector
C (TAB)
DS98657B(10/08)
C (TAB)
= Collector

Related parts for IXBT16N170

IXBT16N170 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 16A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXBH16N170 IXBT16N170 Maximum Ratings 1700 Ω 1700 ± 20 ± 120 Ω ≤ V 1350 CES 250 -55 ... +150 150 -55 ...

Page 2

... Q 5.89 R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 2.6 V μs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH16N170 IXBT16N170 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

Page 3

... V - Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 32A 16A - Degrees Centigrade J Fig. 6. Input Admittance 40ºC J 5.0 5.5 6.0 6.5 7.0 7 Volts GE IXBH16N170 IXBT16N170 V = 15V GE 13V 11V CE(sat 100 125 150 25ºC 125ºC 8.0 8.5 9.0 9.5 ...

Page 4

... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125º 0.6 0.8 1.0 1.2 1.4 1.6 1 Volts F Fig. 10. Capacitance MHz C ies C oes C res Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXBH16N170 IXBT16N170 = 25ºC 2.0 2.2 2 IXYS REF: B_16N170(4A)10-06-08 ...

Page 5

... Switching Times vs. Gate Resistance d(off ) T = 125º 15V 850V 16A 32A 100 120 R - Ohms G IXBH16N170 IXBT16N170 260 250 I = 16A C 240 230 220 210 I = 32A C 200 190 95 105 115 125 1400 1200 1000 800 600 400 200 ...

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