IXBT24N170 IXYS, IXBT24N170 Datasheet

no-image

IXBT24N170

Manufacturer Part Number
IXBT24N170
Description
HV (1600V-1700V)
Manufacturer
IXYS
Datasheet

Specifications of IXBT24N170

Vces, (v)
1700
Ic25, Tc=25°c, (a)
60
Ic90, Tc=90°c, (a)
24
Vce(sat), Typ, Tj=25°c, (v)
2.5
Tf Typ, Tj=25°c, (ns)
750
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.5
Package Style
TO-268
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 250μA, V
= 250μA, V
= I
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8 • V
= 15V, T
C110
TM
, V
Monolithic
GE
GE
CES
VJ
= 15V, Note 1
GE
CE
= ± 20V
= 125°C, R
, V
= V
= 0V
GE
GE
= 0V
GE
= 1M
G
= 10
Advance Technical Information
Ω
T
T
Ω
J
J
= 125°C
= 125°C
IXBH24N170
IXBT24N170
1700
V
-55 ... +150
-55 ... +150
2.5
Min.
CES
Characteristic Values
I
Maximum Ratings
CM
1.13/10
1360
1700
= 50
1700
± 20
± 30
230
250
150
300
260
60
24
Typ.
6
4
2.4
±100
Max.
Nm/lb.in.
500
2.5
5.0
25
μA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
g
TO-247 (IXBH)
TO-268 (IXBT)
G = Gate
E = Emitter
V
I
V
Features
Advantages
Applications
C110
International Standard pPackages
Low Conduction Losses
Low Gate Drive Requirement
High Power Density
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
High Blocking Voltage
CES
CE(sat)
G
C
≤ ≤ ≤ ≤ ≤ 2.5V
= 1700V
= 24A
E
G
C
TAB = Collector
E
C (TAB)
C (TAB)
= Collector
DS100190(9/09)

Related parts for IXBT24N170

IXBT24N170 Summary of contents

Page 1

... CES 0V ± 20V GES 15V, Note 1 CE(sat) C C110 GE © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXBH24N170 IXBT24N170 Maximum Ratings 1700 Ω 1700 ± 20 ± 230 Ω ≤ V 1360 CES 250 -55 ...

Page 2

... Q 5.89 R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 2.8 V μs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH24N170 IXBT24N170 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 .084 3.12 .113 ...

Page 3

... V - Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 48A - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25ºC - 40º Volts GE IXBH24N170 IXBT24N170 CE(sat) = 24A I = 12A C 100 125 150 ...

Page 4

... Fig. 8. Forward Voltage Drop of Intrinsic Diode 0 0.0 0.4 0.8 1.2 1 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXBH24N170 IXBT24N170 T = 125º 25ºC J 2.0 2.4 2.8 3.2 C ies C oes C res 0 ...

Page 5

... T = 125º 15V 850V 24A 48A Ohms G IXBH24N170 IXBT24N170 340 330 320 310 300 290 280 270 260 105 115 125 1100 1000 900 800 700 600 500 400 300 200 100 ...

Related keywords