IXBF42N300 IXYS, IXBF42N300 Datasheet

no-image

IXBF42N300

Manufacturer Part Number
IXBF42N300
Description
VHV (2500V-3000V)
Manufacturer
IXYS
Datasheet

Specifications of IXBF42N300

Vces, (v)
3000
Ic25, Tc=25°c, (a)
60
Ic90, Tc=90°c, (a)
-
Ic110, Tc=110°c, (a)
24
Vce(sat), Typ, Tj=25°c, (v)
3.0
Tf Typ, Tj=25°c, (ns)
610
Tfi Typ, Tj=25°c, (ns)
-
Gate Drive, (v)
-
Rthjc, Max, (k/w)
0.52
Package Style
ISOPLUS I4-Pak
High Voltage, BiMOSFET
Monolithic Bipolar MOS
Transistor
(Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
T
(SCSOA)
P
T
T
T
T
T
F
V
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
SC
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
V
R
C
C
C
C
J
C
C
C
C
CE
CE
GE
GE
G
= 25°C to 150°C, R
= 1mA, V
= 1mA, V
= 42A, V
= 25°C to 150°C
= 25°C
= 110°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8 • V
= 15V, T
= 82Ω, V
= 15V, T
GE
GE
GE
CE
CES
VJ
J
CE
= ± 25V
= 15V, Note 1
= 125°C,
= 0V
= V
= 125°C, R
, V
= 1500V, Non-Repetitive
GE
GE
= 0V
GE
Note 2, T
= 1M
G
= 20
Preliminary Technical Information
TM
Ω
T
Ω
J
J
= 125°C
= 125°C
IXBF42N300
V
20..120 / 4.5..27
CE
Characteristic Values
3000
3.0
Min.
-55 ... +150
-55 ... +150
0.8 • V
I
CM
Maximum Ratings
3000
= 84
3000
3000
± 25
± 35
380
240
150
300
260
CES
10
60
24
Typ.
250
5
2.5
3.1
±200
Max.
Nm/lb.in.
5.0
3.0
50
V~
μA
μA
nA
μs
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Advantages
Applications
C110
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
3000V~ Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
FBSOA Rated
SCSOA Rated
Low Gate Drive Requirement
High Power Density
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
High Blocking Voltage
CES
CE(sat)
1
2
≤ ≤ ≤ ≤ ≤ 3.0V
= 3000V
= 24A
5
5 = Collector
TM
Isolated Tab
DS100325A(06/11)

Related parts for IXBF42N300

IXBF42N300 Summary of contents

Page 1

... CES CE CES 0V ± 25V GES 42A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information TM IXBF42N300 Maximum Ratings 3000 Ω 3000 ± 25 ± 380 Ω ≤ V 0.8 • CES ...

Page 2

... J 580 460 490 0.15 Characteristic Values Min. Typ. 1.7 /dt = 100A/μs 43 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBF42N300 ISOPLUS i4-Pak Max Ω 0.52 °C/W °C/W Max 2.5 V μs A 6,404,065 B1 ...

Page 3

... T = 25ºC 180 J 160 140 120 100 IXBF42N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 84A 42A 21A C -50 ...

Page 4

... IXBF42N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0 Volts F Fig. 10. Capacitance MHz ...

Page 5

... G GE 900 V = 1500V CE 460 800 = 25ºC 700 J 440 600 420 500 400 400 300 380 200 IXBF42N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current T = 125º 20Ω 15V 1500V 25º Amperes C Fig ...

Page 6

... Fig. 20. Forward-Bias Safe Operating Area @ T C 1000 V Limit CE(sat) 100 25µs 10 100µs 1ms 1 10ms 0.1 100ms 150º 115ºC C Single Pulse 0.001 1000 10000 1 IXBF42N300 = 115º 100 1000 V - Volts CE IXYS REF: B_42N300(8M)04-14-11 25µs 100µs 1ms 10ms 100ms DC 10000 ...

Related keywords