CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet

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... 20.25 41. NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a Pack (for brake) AISiC Baseplate NUTS MOUNTING HOLES 0 ...

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... di/dt = 2600A 125 100nH j s Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 (Note 1) 1600 800 (Note 1) 1600 9600 –40 ~ +150 –40 ~ +125 – ...

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... Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part Clamp-Di part IGBT part Clamp-Di part C MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 13.0 K/kW — — 25.0 K/kW — ...

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... 125 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

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... 125 C, Inductive load off 2 E rec 1 0 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 800A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 800A C = 15V off ...

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... MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V 2.5 G(off ...

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... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 2500 125 C j 2000 1500 1000 500 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 3600A/ s 1000 2000 3000 4000 Jul. 2005 ...