CM400E4G-130H Powerex Inc, CM400E4G-130H Datasheet - Page 2

• Manufacturer Part Number: CM400E4G-130H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM400E4G-130H

• Prx Availability: RequestQuote
• Voltage: 6500V
• Current: 400A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: No

3
MAXIMUM RATINGS
V
V
I
I
I
I
P
V
V
T
T
T
t
ELECTRICAL CHARACTERISTICS
I
V
I
C
C
C
Q
V
t
t
E
t
t
t
E
V
t
t
Q
E
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
C
CM
E
EM
psc
CES
GES
d(on)
r
d(off)
f
f2
rr
rr2
th
j
op
stg
CES
GES
c
iso
e
GE(th)
CE(sat)
on(10%)
off(10%)
EC
rec(10%)
ies
oes
res
g
rr
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off fall time
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery time
Reverse recovery energy
Reverse recovery charge
Item
Item
(Note 2), (Note 5)
(Note 2)
(Note 5)
(Note 5)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 2)
V
V
DC, T
Pulse
DC
Pulse
T
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
V
V
V
V
V
T
V
V
I
V
V
V
T
t
V
V
T
Inductive load
I
V
V
V
T
t
C
(IGBT_off)
E
(IGBT_off)
c
j
j
j
j
GE
CE
CC
CE
CE
GE
CE
CC
GE
GE
CC
GE
CC
GE
GE
CC
GE
= 400 A
= 400 A
= 25°C
= 125 °C, L
= 125 °C, L
= 125 °C, L
= 25°C, IGBT part
= 0V, T
= V
= 10 V, I
= 10 V, V
= 0 V
=4500V, V
= V
= 3600 V, I
= ±15 V, T
= 15 V
= 3600 V, I
= ±15 V, R
= 3600 V, I
= ±15 V, R
= 0 V
= 3600 V, I
= ±15 V, R
c
(Note 1)
(Note 1)
= 80°C
CES
GES
= 60 µs
= 60 µs
, V
, V
(Note 4)
(Note 4)
j
= 25°C
C
Conditions
GE
CE
GE
s
s
s
= 40 mA, T
j
CE
G(on)
G(off)
G(on)
C
= 170 nH
= 170 nH
= 170 nH
C
C
E
= 25 °C
= 0V
(Note 6)
(Note 6)
= 0V, T
= 0 V, f = 100 kHz
= 400 A
= 400 A
= 400 A
= 400 A
Conditions
≤ V
= 15 Ω
= 50 Ω
= 15 Ω
CES
, Inductive load
, Inductive load
j
, V
= 25°C
T
T
T
T
T
T
j
GE
j
j
= 25°C
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
= 25 °C
= 125 °C
=15V, T
PD
T
T
T
j
j
j
≤ 10 pC
= -40 °C
= +25 °C
= +125 °C
CM400E4G-130H
j
=125°C
−0.5
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
82.0
0.35
Typ
740
−40 ~ +150
−40 ~ +125
−40 ~ +125
6.0
5.0
1.4
6.6
4.5
4.6
1.2
3.0
8.2
0.5
3.1
2.7
4.0
3.6
1.0
2.4
1.4
20
—
—
Ratings
HVM-1049-B
10200
5800
6300
6500
5900
5100
INSULATED TYPE
± 20
400
800
400
800
10
Max
7.0
0.5
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
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Unit
Unit
mA
J/P
J/P
J/P
µA
µC
µC
°C
°C
°C
µs
nF
nF
nF
µs
µs
µs
µs
µs
µs
µs
W
V
V
A
A
A
A
V
V
V
V
V