CM400HG-130H Powerex Inc, CM400HG-130H Datasheet

Page 1

... WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION ●I ……………………… 400 A C ●V …………………… 6500 V CES ●High Insulated Type ●1-element in a Pack ●AlSiC Baseplate CM400HG-130H INSULATED TYPE Dimensions in mm HVM-1045 ...

Page 2

... V = ± Ω GE G(on 125 ° 150 nH (Note (Note µs , Inductive load (IGBT_off) MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE Ratings = -40 °C 5800 j = +25 °C 6300 j = +125 °C 6500 j ± 20 400 800 400 800 ...

Page 3

... M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw ° does not exceed T j rating (150°C). jmax x 0. (IGBT_off) MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 21.0 K/kW — — 33.0 K/kW — ...

Page 4

... 10 ∫ ic•vce dt Eon = – Qrr – Erec 10 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 90 50%I C 10%V 10 td(off) tf2 ∫ Eoff = tf = (0.9ic − 0.1ic) / (di/dt toff = td(off ∫ ∫ ...

Page 5

... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 600 Tj = 125°C 400 200 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL) = 20V 125° 25° Gate - Emitter Voltage [ 125° 25° ...

Page 6

... HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL Eoff Erec 1 0 800 1000 0 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 3600V 400A 25° Gate Charge [µ 3600V 400A ±15V 125°C ...

Page 7

... Tj = 125°C, Inductive load td(off) 10 td(on 10000 − [K/kW] τi [sec MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE = 3600V ±15V Ω Ω G(on) G(off) Irr trr 100 1000 10000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ ...

Page 8

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL SHORT CIRCUIT SAFE OPERATING AREA 10000 8000 6000 4000 2000 0 6000 8000 6000 8000 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (SCSOA) V ≤ 4500V ±15V 125°C, R ≥ 50 Ω G(off) 0 2000 ...