FGB20N60SFD Fairchild Semiconductor, FGB20N60SFD Datasheet - Page 5

• Manufacturer Part Number: FGB20N60SFD
• Manufacturer: Fairchild Semiconductor

FGB20N60SFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
2500
2000
1500
1000
100
500
0.1
10
20
16
12
1
0
8
4
0
0.1
1
0
*Notes:
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
= 150
= 25
4
Gate-Emitter Voltage, V
I
o
C
20A
o
C
= 10A
C
C
C
C
10
ies
res
oes
8
1
40A
12
Common Emitter
V
T
DC
100
10 ms
GE
C
Common Emitter
T
C
= 25
= 0V, f = 1MHz
GE
1ms
= 25
CE
CE
100
o
[V]
[V]
GE
C
o
[V]
16
10
C
μ
s
10
μ
s
1000
20
30
5
Figure 8. Saturation Voltage vs. V
100
Figure 10. Gate charge Characteristics
15
12
10
20
16
12
9
6
3
0
5
Figure 12. Turn-on Characteristics vs.
8
4
0
0
0
0
Common Emitter
T
C
= 25
10
o
C
I
4
C
Gate-Emitter Voltage, V
20
t
t
d(on)
= 10A
r
Gate Resistance, R
V
Gate Resistance
Gate Charge, Q
CC
20
= 100V
8
40
30
Common Emitter
V
I
T
T
C
20A
C
C
CC
= 20A
12
g
= 25
= 125
= 400V, V
[nC]
40
G
Common Emitter
T
300V
o
C
[
C
200V
o
GE
Ω
40A
= 125
C
60
]
[V]
16
GE
50
o
C
= 15V
GE
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80
60
20