FDMS86300DC Fairchild Semiconductor, FDMS86300DC Datasheet - Page 5

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FDMS86300DC

Manufacturer Part Number
FDMS86300DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
Typical Characteristics
0.01
100
200
100
0.1
10
10
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11.
= 24 A
V
Switching Capability
0.1
0.1
DS
Gate Charge Characteristics
SINGLE PULSE
T
R
T
t
20
, DRAIN to SOURCE VOLTAGE (V)
AV
J
A
θ
Operating Area
Unclamped Inductive
JA
DS(on)
= MAX RATED
= 25
, TIME IN AVALANCHE (ms)
Q
= 81
g
, GATE CHARGE (nC)
Forward Bias Safe
o
C
o
V
C/W
DD
T
1
1
J
= 125
T
= 40 V
40
J
= 25
V
T
DD
o
T
C
J
o
J
= 30 V
C
= 100
= 25 °C unless otherwise noted
10
10
o
V
60
C
DD
= 50 V
100
100
10 ms
100 ms
1 ms
1 s
10 s
DC
400
500
80
5
10000
2000
1000
1000
150
120
100
100
90
60
30
10
10
0
Figure 10.
1
5
10
0.1
25
Figure 12. Single Pulse Maximum
-3
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
V
= 0 V
GS
10
= 8 V
V
50
-2
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
C
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
V
CASE TEMPERATURE
10
GS
1
-1
= 10 V
75
R
θ
1
JC
= 1.0
100
o
10
C/W
10
SINGLE PULSE
R
T
(
A
θ
o
JA
C
= 25
)
125
= 81
www.fairchildsemi.com
100
o
C
o
C/W
C
C
C
iss
oss
rss
1000
150
80

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