FDMS3008SDC Fairchild Semiconductor, FDMS3008SDC Datasheet - Page 7

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FDMS3008SDC

Manufacturer Part Number
FDMS3008SDC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS3008SDC.
30
25
20
15
10
-5
5
0
Figure 14. FDMS3008SDC SyncFET body
diode reverse recovery characteristic
0
50
100
TIME (ns)
150
di/dt = 300 A/
(continued)
200
μ
s
250
300
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.000001
0.00001
0.0001
0.001
0.01
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
www.fairchildsemi.com
20
25