FDMS86101DC Fairchild Semiconductor, FDMS86101DC Datasheet - Page 2

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FDMS86101DC

Manufacturer Part Number
FDMS86101DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
= 250 μA, V
= 250 μA, referenced to 25°C
= 14.5 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 80 V, V
= ±20 V, V
= 10 V, I
= 50 V, V
= 0 V, I
= 0 V, I
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 50 V , I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
DS
2
Test Conditions
, I
S
S
D
D
D
= 2.7 A
= 14.5 A
D
D
GS
D
GS
GS
GEN
= 11.5 A
DS
= 250 μA
= 14.5 A, T
= 14.5 A
= 14.5 A
= 14.5 A,
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 14.5 A
= 50 V
J
= 125 °C
(Note 2)
(Note 2)
Min
100
2
2354
0.71
0.78
Typ
467
-10
8.2
5.5
8.3
2.7
8.3
1.4
54
62
14
25
31
18
10
44
23
70
7
6
3135
±100
Max
625
1.2
1.3
www.fairchildsemi.com
7.5
87
99
25
17
40
44
25
12
13
35
11
4
1
mV/°C
mV/°C
Units
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
Ω
V
V
S

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