FDMS86101DC Fairchild Semiconductor, FDMS86101DC Datasheet - Page 4

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FDMS86101DC

Manufacturer Part Number
FDMS86101DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
Typical Characteristics
200
150
100
200
150
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
50
Figure 3. Normalized On- Resistance
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
0
2
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
= 10 V
GS
vs Junction Temperature
= 14.5 A
= 5 V
V
= 10 V
DS
3
T
V
1
, DRAIN TO SOURCE VOLTAGE (V)
-25
J
On-Region Characteristics
T
GS
,
J
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
= 150
V
4
0
GS
o
C
2
V
= 7 V
GS
25
μ
T
s
= 8 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
5
J
= -55
T
T
50
J
J
= 25
3
= 25 °C unless otherwise noted
o
C
75
o
6
C
o
100 125 150
C )
4
V
V
7
GS
GS
= 6 V
= 5 V
μ
s
5
8
4
0.001
0.01
200
100
0.1
10
25
20
15
10
5
4
3
2
1
0
Figure 2.
Figure 4.
1
5
0
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
GS
GS
V
= 0 V
SD
= 5 V
T
0.2
5
J
, BODY DIODE FORWARD VOLTAGE (V)
= 150
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
50
I
Source Voltage
D
Source to Drain Diode
I
,
,
D
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
= 14.5 A
o
0.4
C
6
μ
s
100
0.6
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
T
T
GS
J
= 6 V
J
= 25
0.8
= 125
T
= 8 V
J
8
T
= -55
o
J
150
C
o
= 25
C
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o
V
V
1.0
C
GS
GS
o
9
C
= 10 V
= 7 V
μ
s
1.2
200
10