FDMS8558S Fairchild Semiconductor, FDMS8558S Datasheet - Page 6

• Manufacturer Part Number: FDMS8558S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Typical Characteristics
SyncFET
Characteristics
Fairchild’s SyncFET
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8558S.
40
35
30
25
20
15
10
diode reverse recovery characteristic
-5
Figure 14. FDMS8558S SyncFET
5
0
700
TM
Schottky body diode
TM
800
process embeds a Schottky diode in
TIME (ns)
900
di/dt = 300 A/
(continued)
1000
TM
μ
s
body
1100
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 15. SyncFET
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
10
TM
T
T
J
J
T
body diode reverse
= 125
= 100
J
= 25
15
o
o
o
C
C
C
20
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25