FDMS8570S Fairchild Semiconductor, FDMS8570S Datasheet - Page 3

• Manufacturer Part Number: FDMS8570S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Typical Characteristics
100
100
80
60
40
20
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
Figure 3. Normalized On Resistance
0
0
Figure 1.
1.0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 28 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
0.3
DS
T
-25
J
On Region Characteristics
,
1.5
V
,
V
DRAIN TO SOURCE VOLTAGE (V)
GS
JUNCTION TEMPERATURE (
GS
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 3 V
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
= 3.5 V
GS
T
= 4.5 V
0.6
J
= 150
= 10V
25
μ
s
2.0
o
C
50
T
0.9
J
= 25 °C unless otherwise noted
75
μ
s
T
2.5
J
o
100 125 150
= -55
V
C )
1.2
T
GS
J
= 25
= 2.5 V
o
C
o
C
1.5
3.0
3
0.01
4.5
3.6
2.7
1.8
0.9
0.5
100
0.1
Figure 2.
10
9
8
7
6
5
4
3
2
1
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
V
3
T
SD
0.2
V
J
GS
, BODY DIODE FORWARD VOLTAGE (V)
20
= 150
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
= 2.5 V
I
Source Voltage
D
4
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
C
0.4
T
5
J
40
= -55
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
T
J
V
GS
= 25
60
7
= 4.5 V
0.8
o
C
T
T
J
J
= 125
= 25
8
www.fairchildsemi.com
80
V
V
1.0
V
I
GS
GS
D
GS
o
o
C
= 28 A
C
= 3.5 V
= 10 V
9
= 3 V
μ
μ
s
s
1.2
100
10