FDMC86116LZ Fairchild Semiconductor, FDMC86116LZ Datasheet - Page 4

• Manufacturer Part Number: FDMC86116LZ
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C
Typical Characteristics
10
10
0.001
10
9
8
7
6
5
4
3
2
1
8
6
4
2
0
Figure 11. Maximum Continuous Drain
Figure 7.
8
6
4
2
0
25
0
Limited by package
I
D
Figure 9.
R
Current vs Case Temperature
= 3.3 A
θ
JC
= 6.5
50
Switching Capability
1
0.01
Gate Charge Characteristics
t
AV
T
o
C/W
C
, TIME IN AVALANCHE (ms)
,
Unclamped Inductive
Q
CASE TEMPERATURE (
g
, GATE CHARGE (nC)
T
J
75
= 125
2
V
DD
T
J
0.1
o
= 25
= 25 V
C
V
V
T
100
o
GS
T
DD
J
C
3
J
= 100
= 4.5 V
V
= 25 °C unless otherwise noted
= 75 V
GS
= 10 V
o
o
V
C
C )
1
DD
125
= 50 V
4
150
10
5
4
Figure 10.
1000
0.005
100
10
10
10
10
10
10
10
10
10
0.01
10
0.1
20
10
1
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.1
1
0.1
0
f = 1 MHz
V
Figure 8.
V
GS
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
GS
Figure 12.
J
A
θ
JA
= MAX RATED
= 25
= 0 V
4
= 0 V
= 125
Gate Leakage Current vs Gate to
V
o
V
DS
C
to Source Voltage
DS
8
V
, DRAIN TO SOURCE VOLTAGE (V)
o
Source Voltage
Operating Area
GS
C/W
, DRAIN to SOURCE VOLTAGE (V)
Capacitance vs Drain
DS(on)
1
, GATE TO SOURCE VOLTAGE (V)
12
1
Forward Bias Safe
T
J
= 125
16
o
C
20
10
T
J
= 25
10
24
o
C
28
C
C
C
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100
DC
1 ms
100 ms
1 s
10 s
32
100 us
10 ms
100
36
400