FDPF085N10A Fairchild Semiconductor, FDPF085N10A Datasheet - Page 2

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FDPF085N10A

Manufacturer Part Number
FDPF085N10A
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF085N10A
Manufacturer:
FAIRCHILD
Quantity:
8 000
Company:
Part Number:
FDPF085N10A
Quantity:
4 500
FDPF085N10A Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3 mH, I
3. I
4. Pulse Test: Pulse width £ 300ms, Dual Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
DBV
I
I
V
R
g
C
C
C
C
Q
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DT
FS
GS(th)
DS(on)
iss
oss
rss
oss
SD
SD
g(tot)
gs
gs2
gd
rr
Device Marking
Symbol
DSS
FDPF085N10A
J
£ 40 A, di/dt £ 200A/ms, V
DSS
(er)
AS
= 13.4 A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25W, Starting T
DD
£ BV
FDPF085N10A
DSS
Device
Parameter
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25
o
C unless otherwise noted
Package
TO-220F
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
I
Drain Open, f = 1MHz
V
V
D
D
D
DS
DS
GS
DD
GS
GS
DD
GS
GS
DS
DS
DS
GS
F
= 250mA, V
= 250mA, Referenced to 25
= 96A
/dt = 100A/ms
= 80V, V
= 80V, T
= ±20V, V
= 0V, I
= 10V, I
= 50V, V
= 50V, V
= 50V, I
= 50V,V
= V
= 10V, I
= 10V, V
= 10V, R
DS
Test Conditions
, I
SD
2
D
D
D
D
GS
C
GS
GS
GS
DS
GEN
GS
Reel Size
= 40A
= 40A
= 40A
= 96A
= 250mA
DS
= 150
= 0V, I
= 0V
= 50V
= 0V
= 0V
= 0V
= 0V
= 4.7W
-
o
C
SD
= 96A
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
Tape Width
Min.
100
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2025
Typ.
0.07
0.97
468
752
6.5
9.7
5.0
7.5
59
80
76
20
31
18
22
29
8
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Max.
±100
2695
Quantity
500
620
160
1.3
4.0
8.5
40
40
46
54
68
26
1
-
-
-
-
-
-
-
-
-
-
-
50
Units
V/
mW
nC
nC
nC
nC
mA
nA
pF
pF
pF
pF
nC
ns
ns
ns
ns
ns
W
V
V
S
A
A
V
o
C

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